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TrenchStop(R) Series
IKP20N60T IKW20N60T
Low Loss DuoPack : IGBT in TrenchStop(R) and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
* * * * * Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time - 5s Designed for : - Frequency Converters - Uninterrupted Power Supply TrenchStop(R) and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed - low VCE(sat) PG-TO-220-3-1 Positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge Very soft, fast recovery anti-parallel EmCon HE diode Qualified according to JEDEC1 for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 600V 600V IC 20A 20A VCE(sat),Tj=25C 1.5V 1.5V Tj,max 175C 175C Marking K20T60 K20T60 Package PG-TO-220-3-1 PG-TO-247-3
C
G
E
PG-TO-247-3
* * * * * * *
Type IKP20N60T IKW20N60T
Maximum Ratings Parameter Collector-emitter voltage DC collector current, limited by Tjmax TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area (VCE 600V, Tj 175C) Diode forward current, limited by Tjmax Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time
2)
Symbol VCE IC
Value 600 40 20
Unit V A
ICpuls IF IFpuls VGE tSC Ptot Tj Tstg -
60 60 40 20 60 20 5 166 -40...+175 -55...+175 260 V s W C
TC = 25C TC = 100C
VGE = 15V, VCC 400V, Tj 150C Power dissipation TC = 25C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s
1 2)
J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2.5 Sep. 08
Power Semiconductors
TrenchStop(R) Series
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Diode thermal resistance, junction - case Thermal resistance, junction - ambient Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0 V , I C =0.2mA VCE(sat) V G E = 15 V, I C =20A T j = 25C T j = 175 C Diode forward voltage VF VGE=0V, IF=20A T j = 25C T j = 175 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C =290A,V C E =V G E V C E = 60 0 V, VGE=0V T j = 25C T j = 175 C Gate-emitter leakage current Transconductance Integrated gate resistor Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current
1)
IKP20N60T IKW20N60T
Max. Value 0.9 1.5 62 40 Unit K/W
Symbol RthJC RthJCD RthJA
Conditions
Symbol
Conditions
Value min. 600 4.1 Typ. 1.5 1.9 1.65 1.6 4.9 max. 2.05 2.05 5.7
Unit
V
A 11 40 1000 100 nA S
IGES gfs RGint
V C E = 0 V , V G E =20V V C E =20V, I C =20A
Ciss Coss Crss QGate LE IC(SC)
V C E =25V, VGE=0V, f=1MHz V C C = 48 0 V, I C =20A V G E =15V T O-2 47- 3-2 1 T O-2 20- 3-1 V G E =15V,t S C 5 s V C C = 400 V, T j 150C
-
1100 71 32 120 13 7 183.3
-
pF
nC nH A
1) 2)
Allowed number of short circuits: <1000; time between short circuits: >1s. Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E. 2 Rev. 2.5 Sep. 08
Power Semiconductors
TrenchStop(R) Series
Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b trr Qrr Irrm dirr/dt T j = 25C , V R = 40 0 V , I F =20A, d i F /d t= 880A/s td(on) tr td(off) tf Eon Eoff Ets T j = 25C , V C C = 40 0 V, I C =20A, V G E = 0 /1 5 V, RG=12 , L 2 ) =1 31nH, C 2 ) =31pF Energy losses include "tail" and diode reverse recovery. Symbol Conditions
IKP20N60T IKW20N60T
Value min. Typ. 18 14 199 42 0.31 0.46 0.77 41 0.31 13.3 711 max. ns C A A/s mJ Unit
ns
Switching Characteristic, Inductive Load, at Tj=175 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b trr Qrr Irrm dirr/dt T j = 175 C V R = 40 0 V , I F =20A, d i F /d t= 880A/s 176 1.46 18.9 467 ns C A A/s td(on) tr td(off) tf Eon Eoff Ets T j = 175 C , V C C = 40 0 V, I C =20A, V G E = 0 /1 5 V, RG= 12 L 1 ) =1 31nH, C 1 ) =31pF Energy losses include "tail" and diode reverse recovery. 18 18 223 76 0.51 0.64 1.15 mJ ns Symbol Conditions Value min. Typ. max. Unit
1)
Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E. 3 Rev. 2.5 Sep. 08
Power Semiconductors
TrenchStop(R) Series
IKP20N60T IKW20N60T
tp=2s 10s
60A 50A 40A 30A 20A 10A 0A 10H z T C =80C T C =110C
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
10A 50s
1A
Ic
Ic
100H z 1kH z 10kH z 100kH z
1ms DC 10ms
0.1A 1V
10V
100V
1000V
f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 175C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 12)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 175C; VGE=15V)
160W 140W 120W 100W 80W 60W 40W 20W 0W 25C
30A
IC, COLLECTOR CURRENT
POWER DISSIPATION
25A 20A 15A 10A 5A 0A 25C
Ptot,
50C
75C
100C 125C 150C
75C
125C
TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 175C)
TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 175C)
Power Semiconductors
4
Rev. 2.5 Sep. 08
TrenchStop(R) Series
IKP20N60T IKW20N60T
50A
50A
IC, COLLECTOR CURRENT
40A
IC, COLLECTOR CURRENT
V GE =20V 15V 13V 30A 11V 9V 20A 7V
V G E =20V 40A 15V 13V 30A 11V 9V 20A 7V
10A
10A
0A 0V 1V 2V 3V
0A 0V 1V 2V 3V 4V
VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25C)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 175C)
35A 30A 25A 20A 15A 10A 5A 0A
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE
2.5V
IC =40A
IC, COLLECTOR CURRENT
2.0V
1.5V
IC =20A IC =10A
1.0V
T J = 1 7 5 C 2 5 C
0.5V
0.0V
0V
2V
4V
6V
8V
0C
50C
100C
150C
VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=10V)
TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V)
Power Semiconductors
5
Rev. 2.5 Sep. 08
TrenchStop(R) Series
IKP20N60T IKW20N60T
t d(off)
t d(off)
t, SWITCHING TIMES
tf t d(on) 10ns
t, SWITCHING TIMES
100ns
100ns
tf
t d(on)
tr
tr
1ns
0A
5A
10A
15A
20A
25A
30A
35A
10ns
10
20
30
40
50
60
70
IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175C, VCE = 400V, VGE = 0/15V, RG = 12, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ = 175C, VCE= 400V, VGE = 0/15V, IC = 20A, Dynamic test circuit in Figure E)
7V 6V m ax. 5V 4V 3V 2V 1V 0V -50C m in. typ.
t d(off)
t, SWITCHING TIMES
100ns
tf
t d(on)
tr 10ns 25C 50C 75C 100C 125C 150C
VGE(th), GATE-EMITT TRSHOLD VOLTAGE
0C
50C
100C
150C
TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 20A, RG=12, Dynamic test circuit in Figure E)
TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.29mA)
Power Semiconductors
6
Rev. 2.5 Sep. 08
TrenchStop(R) Series
*) Eon and Ets include losses due to diode recovery
IKP20N60T IKW20N60T
2.4mJ
Ets*
2.4 m J
*) E on an d E ts in c lud e lo s se s du e to d io d e re co v ery E ts *
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
2.0mJ
2.0 m J
1.6mJ
1.6 m J E off 1.2 m J
1.2mJ Eoff
0.8mJ
0.8 m J
0.4mJ Eon* 0A 5A 10A 15A 20A 25A 30A 35A
0.4 m J
E on *
0.0mJ
0.0 m J
0 15 30 45 60
IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ = 175C, VCE = 400V, VGE = 0/15V, RG = 12, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ = 175C, VCE = 400V, VGE = 0/15V, IC = 20A, Dynamic test circuit in Figure E)
*) Eon and Ets include losses due to diode recovery 1.0mJ
2.0m J
Ets*
1.8m J
*) E on and E ts include losses due to diode recovery
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
1.6m J 1.4m J 1.2m J 1.0m J E ts * 0.8m J 0.6m J 0.4m J 0.2m J E on * E off
0.8mJ
0.6mJ
Eoff
0.4mJ Eon*
0.2mJ
0.0mJ 25C
50C
75C
100C 125C 150C
0.0m J 300V
350V
400V
450V
500V
550V
TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 20A, RG = 12, Dynamic test circuit in Figure E)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ = 175C, VGE = 0/15V, IC = 20A, RG = 12, Dynamic test circuit in Figure E)
Power Semiconductors
7
Rev. 2.5 Sep. 08
TrenchStop(R) Series
IKP20N60T IKW20N60T
C iss
1nF
VGE, GATE-EMITTER VOLTAGE
15V 120V 480V 10V
c, CAPACITANCE
100pF C oss C rss
5V
0V 0nC
30nC
60nC
90nC
120nC
10pF
0V
10V
20V
30V
40V
QGE, GATE CHARGE Figure 17. Typical gate charge (IC=20 A)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz)
12s
IC(sc), short circuit COLLECTOR CURRENT
SHORT CIRCUIT WITHSTAND TIME
300A 250A 200A 150A 100A 50A 0A 12V
10s 8s 6s 4s 2s 0s 10V
tSC,
14V
16V
18V
11V
12V
13V
14V
VGE, GATE-EMITTETR VOLTAGE Figure 19. Typical short circuit collector current as a function of gateemitter voltage (VCE 400V, Tj 150C)
VGE, GATE-EMITETR VOLTAGE Figure 20. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ=25C, TJmax<150C)
Power Semiconductors
8
Rev. 2.5 Sep. 08
TrenchStop(R) Series
IKP20N60T IKW20N60T
D=0.5
ZthJC, TRANSIENT THERMAL RESISTANCE
0.2 10 K/W
-1
ZthJC, TRANSIENT THERMAL RESISTANCE
10 K/W D=0.5
0
0.2 0.1 10 K/W
-1
0.1 0.05
R,(K/W) 0.18715 0.31990 0.30709 0.07041
R1
, (s)
0.02 10 K/W
-2
6.925*10 -2 1.085*10 -4 6.791*10 -5 9.59*10
R2
-2
R,(K/W) 0.13483 0.58146 0.44456 0.33997
, (s) -2 9.207*10 -2 1.821*10 -3 1.47*10 -4 1.254*10
R2
6
0.05 0.02 0.01
R1
0.01
C1=1/R1 C2=2/R2
C1= 1/R1
C2= 2/R2
single pulse
single pulse
1s
10s 100s
1ms
10ms 100ms
10 K/W 1s
-2
10s
100s
1ms
10ms 100ms
tP, PULSE WIDTH Figure 21. IGBT transient thermal resistance (D = tp / T)
tP, PULSE WIDTH Figure 22. Diode transient thermal impedance as a function of pulse width (D=tP/T)
1.8C 1.6C
250ns
T J=175C
Qrr, REVERSE RECOVERY CHARGE
trr, REVERSE RECOVERY TIME
1.4C 1.2C 1.0C 0.8C 0.6C 0.4C 0.2C 600A/s 900A/s 1200A/s
200ns
150ns
TJ=175C
T J=25C
100ns
50ns
TJ=25C
900A/s 1200A/s
0ns 600A/s
diF/dt, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery time as a function of diode current slope (VR=400V, IF=20A, Dynamic test circuit in Figure E)
diF/dt, DIODE CURRENT SLOPE Figure 24. Typical reverse recovery charge as a function of diode current slope (VR = 400V, IF = 20A, Dynamic test circuit in Figure E)
Power Semiconductors
9
Rev. 2.5 Sep. 08
TrenchStop(R) Series
IKP20N60T IKW20N60T
T J=25C
T J =175C
24A 20A 16A 12A 8A 4A 0A
-750A/s
dirr/dt, DIODE PEAK RATE OF FALL OF REVERSE RECOVERY CURRENT
REVERSE RECOVERY CURRENT
-600A/s
T J =25C
-450A/s
T J=175C
-300A/s
Irr,
-150A/s
600A/s
900A/s
1200A/s
0A/s 600A/s
900A/s
1200A/s
diF/dt, DIODE CURRENT SLOPE Figure 25. Typical reverse recovery current as a function of diode current slope (VR = 400V, IF = 20A, Dynamic test circuit in Figure E)
diF/dt, DIODE CURRENT SLOPE Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=400V, IF=20A, Dynamic test circuit in Figure E)
50A
T J =25C 175C
2.0V
I F =40A
40A
VF, FORWARD VOLTAGE
IF, FORWARD CURRENT
1.5V
20A
30A
1.0V
10A
20A
10A
0.5V
0A
0V
1V
2V
0.0V 0C
50C
100C
150C
VF, FORWARD VOLTAGE Figure 27. Typical diode forward current as a function of forward voltage
TJ, JUNCTION TEMPERATURE Figure 28. Typical diode forward voltage as a function of junction temperature
Power Semiconductors
10
Rev. 2.5 Sep. 08
TrenchStop(R) Series
PG-TO-220-3-1
IKP20N60T IKW20N60T
Power Semiconductors
11
Rev. 2.5 Sep. 08
TrenchStop(R) Series
IKP20N60T IKW20N60T
PG-TO247-3
M
M
MIN 4.90 2.27 1.85 1.07 1.90 1.90 2.87 2.87 0.55 20.82 16.25 1.05 15.70 13.10 3.68 1.68 5.44 3 19.80 4.17 3.50 5.49 6.04
MAX 5.16 2.53 2.11 1.33 2.41 2.16 3.38 3.13 0.68 21.10 17.65 1.35 16.03 14.15 5.10 2.60
MIN 0.193 0.089 0.073 0.042 0.075 0.075 0.113 0.113 0.022 0.820 0.640 0.041 0.618 0.516 0.145 0.066 0.214 3
MAX 0.203 0.099 0.083 0.052 0.095 0.085 0.133 0.123 0.027 0.831 0.695 0.053 0.631 0.557 0.201 0.102
Z8B00003327 0
0
55 7.5mm
20.31 4.47 3.70 6.00 6.30
0.780 0.164 0.138 0.216 0.238
0.799 0.176 0.146 0.236 0.248
17-12-2007 03
Power Semiconductors
12
Rev. 2.5 Sep. 08
TrenchStop(R) Series
IKP20N60T IKW20N60T
diF /dt tr r =tS +tF Qr r =QS +QF tr r
i,v
IF
tS QS
tF 10% Ir r m t VR
Ir r m
QF
dir r /dt 90% Ir r m
Figure C. Definition of diodes switching characteristics
1
Tj (t) p(t)
r1
r2
2
n
rn
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit
Power Semiconductors
13
Rev. 2.5 Sep. 08
TrenchStop(R) Series
IKP20N60T IKW20N60T
Published by Infineon Technologies AG 81726 Munich, Germany (c) 2008 Infineon Technologies AG All Rights Reserved.
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Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Power Semiconductors
14
Rev. 2.5 Sep. 08

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